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(R)
STPS2L30A
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS
n
2A 30 V 150 C 0.375 V
n
n
n
LOW COST DEVICE WITH LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION. OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH LEADS TO THE HIGHEST YIELD IN THE APPLICATIONS. HIGH POWER SURFACE MOUNT MINIATURE PACKAGE. AVALANCHE CAPABILITY SPECIFIED
SMA JEDEC DO-214AC
DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection. Packaged in SMA, this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * TL = 120C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz square tp = 100 s square tp = 1s Tj = 25C Parameter Repetitive peak reverse voltage Value 30 10 2 75 1 1 1500 - 65 to + 150 150 Unit V A A A A A W C C V/s
dV/dt Critical rate of rise of reverse voltage 10000 dPtot 1 thermal runaway condition for a diode on its own heatsink *: < dTj Rth( j - a )
July 2003 - Ed: 3A
1/5
STPS2L30A
THERMAL RESISTANCES Symbol Rth (j-l) Junction to lead Parameter Value 30 Unit C/W
STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameters Reverse leakage current Tests Conditions Tj = 25C Tj = 100C VF * Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 4 A 0.43 IF = 2 A 0.325 VR = VRRM 6 Min. Typ. Max. 200 15 0.45 0.375 0.53 0.51 Unit A mA V
Pulse test :
* tp = 380 s, < 2%
To evaluate the conduction losses use the following equation : P = 0.24 x IF(AV) + 0.068 IF2(RMS)
Fig. 1: Average forward power dissipation versus average forward current.
PF(av)(W)
= 0.1 = 0.05 = 0.2 = 0.5
Fig. 2: Average forward current versus ambient temperature (=0.5).
IF(av)(A)
Rth(j-a)=Rth(j-l)
1.2 1.0 0.8 0.6 0.4 0.2
=1
T
tp =tp/T IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
Rth(j-a)=120C/W
T
=tp/T
tp
Tamb(C) 50 75 100 125 150
0
25
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STPS2L30A
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration.
IM(A) 10 8 6 4 2
IM t
1.0 0.8
Ta=25C
Zth(j-a)/Rth(j-a)
0.6 0.4
= 0.5
Ta=50C
= 0.2
T
Ta=100C
=0.5
0.2
= 0.1 Single pulse
t(s) 1E-2 1E-1 1E+0
tp(s) 1E+0 1E+1
=tp/T
tp
0 1E-3
0.0 1E-2
1E-1
1E+2
5E+2
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
IR(mA) 1E+2
Tj=150C
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(pF) 500
F=1MHz Tj=25C
1E+1 1E+0 1E-1 1E-2 1E-3 0 5
Tj=125C
Tj=100C
100
Tj=25C
VR(V) 10 15 20 25 30
VR(V) 10 1 2 5 10 20 30
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STPS2L30A
Fig. 9-1: Forward voltage drop versus forward current (maximum values, high level).
IFM(A)
10.00
Tj=125C Typical values Tj=150C
Tj=150C
Fig. 9-2: Forward voltage drop versus forward current (typical values, low level).
IFM(A)
10.00
1.00
Tj=25C
Tj=125C Tj=25C
1.00
0.10
Tj=100C
VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.10 0.0 0.1 0.2 0.3
VFM(V) 0.4 0.5 0.6 0.7
Fig. 9-3: Forward voltage drop versus forward current (maximum values, low level).
Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35m).
Rth(j-a) (C/W) 140
IFM(A) 3.0
Typical values Tj=150C
2.5
Tj=125C
Tj=25C
120 100
2.0 1.5 1.0 0.5
Tj=100C
80 60 40 20 0 S(Cu) (cm) 0 1 2 3 4 5
VFM(V) 0.0 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
4/5
STPS2L30A
PACKAGE MECHANICAL DATA SMA DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60
Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063
D
A1 A2 b
1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75
E
c
A1
E E1
b
C L
A2
D L
FOOT PRINT DIMENSIONS (in millimeters)
1.65
1.45
Ordering type STPS2L30A
n n
2.40
1.45
Package SMA Weight 0.068g Base qty 5000 Delivery mode Tape & reel
Marking G30
BAND INDICATES CATHODE EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5

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